Intersubband Transitions in Quantum Wells Physics and Devices

Cover of: Intersubband Transitions in Quantum Wells |

Published by Springer .

Written in English

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Subjects:

  • Electricity, magnetism & electromagnetism,
  • Optics (light),
  • Science/Mathematics,
  • Optoelectronic devices,
  • Quantum Electronics,
  • Solid State Physics,
  • Technology,
  • Science,
  • Quantum wells,
  • Physics,
  • Electricity,
  • Optics,
  • Science / Optics,
  • Electronics - Solid State,
  • Congresses,
  • Lasers

Edition Notes

Book details

ContributionsSheng S. Li (Editor), Yan-Kuin Su (Editor)
The Physical Object
FormatHardcover
Number of Pages224
ID Numbers
Open LibraryOL7810126M
ISBN 100792381645
ISBN 109780792381648

Download Intersubband Transitions in Quantum Wells

The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, DecemberThe objective of the Workshop is to facilitate the presentation and discussion of the recent results in. This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September The urge for this Workshop was justified by the impressive growth of.

Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions ( J. lm).

Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the Author: Sheng S. NATO Advanced Research Workshop on Intersubband Transitions in Quantum Wells ( Cargèse, France). Intersubband transitions in quantum wells.

New York: Plenum Press, © (OCoLC) Material Type: Conference publication, Internet resource: Document Type: Book, Internet Resource: All Authors / Contributors. This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, DecemberThe objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of.

The purpose of Intersubband Transitions in Quantum Wells: Physics and Devices, is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots.

Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions ( mum).

Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the Price: $ Intersubband Transitions in Quantum Wells | The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, DecemberBuy Intersubband Transitions in Quantum Wells: Physics and Devices by Li, Sheng S., Su Yan-Kuin, International Workshop on Intersubband T (ISBN: ) from Amazon's Book Store.

Everyday low prices and free delivery on eligible : Sheng S. Li, Su Yan-Kuin, International Workshop on Intersubband T. The values of the bound‐free absorptions are clearly way below the bound‐bound absorptions in quantum wells where both type of intersubband transitions exists.

In semiconductor quantum well structures the subband energy levels and the resulting intersubband absorption properties can be specifically tailored with great design : D. Indjin. Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions ( mum).

Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions ( J.

lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the. Intersubband Transitions in Si/SiGe Heterojunctions, Quantum Dots and Quantum Wells H. Sigg (Paul Scherrer Institute, Switzerland) Chapter All-Optical Modulation and Switching in the Communication Wavelength Regime Using Intersubband Transitions in InGaAs/AlAsSb Heterostructures A.

Neogi (University of North Texas). (source: Nielsen Book Data). Stanford Libraries' official online search tool for books, media, journals, databases, government documents and more. Utilizing the growth temperature controlled epitaxy, high quality GaN/InGaN multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared.

Notes on a formalism for the modelling of intersubband transitions within the conduction band of a quantum well. Notably the model accounts for Coulombic couplings between multiple transitions Author: Robert Steed. Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection - Volume - Clayton L.

Workman, Zhiming Wang, Wenquan Ma, Christi E. George, R. Panneer Selvam, Gregory J. Salamo, Qiaoying Zhou, M. Omar ManasrehAuthor: Clayton L. Workman, Zhiming Wang, Wenquan Ma, Christi E. George, R. Panneer Selvam, Gregory J.

Salam. Other Quantum Systems: Intersubband Absorption in the Conduction Band of Si/SiGe Multiple Quantum Wells; H. Hertle, et al. Physics of Intersubband Transitions: Inelastic Light Scattering Study of Intersubband Transitions; G.

Abstreiter. 23 addtional articles. Intersubband Transitions in GaN-Based Quantum Wells: a New Materials Platform for Infrared Device Applications SPIE Optics and Photonics, paperSan Diego (CA), Aug (Invited Paper).

Cancellation effects of different scattering channels on linewidth of intersubband transitions in quantum wells. In OSA Trends in Optics and Photonics Series (Vol. 97, pp. 33 Author: C.Z. Ning, J. We have probed the dynamics of hot electrons in undoped GaAs/(GaAl)As quantum wells using time-resolved Raman techniques.

By tuning the photon energy of a time-delayed weak probe, we study the n=l to n=2 or n=2 to n=3 intersubband transitions by electronic Raman by: This chapter lists the various topics discussed in the book, “Intersubband Transitions in Quantum Wells, Physics and Device Applications I, Semiconductors and Semimetals,” Vol such as absorption frequency, Coulomb effects, absorption spectrabound-continuum for multiquantum well, band structure effects, band structure engineering, coherence among paths applications, external.

{{Citation | title=Intersubband transitions in quantum wells / edited by Emmanuel Rosencher and [sic] Børge Vinter and Barry Levine | author1=NATO Advanced Research Workshop on Intersubband Transitions in Quantum Wells ( Cargèse, France) | author2=Rosencher, Emmanuel, | author3=Vinter, Borge | author4=Levine, Barry (Barry F.) | author5=North Atlantic Treaty Organization.

Buy (ebook) Intersubband Transitions in Quantum Wells: Physics and Device Applications II by Gerd Mueller, Federico Capasso, eBook format, from the Dymocks online bookstore. 11 Optical properties of quantum wells Carrier–photon scattering Spontaneous emission lifetime Intersubband absorption in quantum wells Bound–bound transitions Bound–free transitions Rectangular quantum well Intersubband optical non-linearities Electric.

A Quantum Well Infrared Photodetector (QWIP) is an infrared photodetector, which uses electronic intersubband transitions in quantum wells to absorb photons. In order to be used for infrared detection, the parameters of the quantum wells in the quantum well infrared photodetector are adjusted so that the energy difference between its first and second quantized states match the incoming.

n-type Ge/SiGe asymmetric coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser.

In this paper, we combine structural and spectroscopic experiments on module superstructures, each featuring two Ge wells coupled through a Ge-rich SiGe tunnel barrier, as a function of the Author: Luca Persichetti, Michele Montanari, Chiara Ciano, Luciana Di Gaspare, Michele Ortolani, Leonetta Ba.

Intersubband transitions in Si-doped molecular beam epitaxygrown GaN/AlGaN multiple quantum wells on c-plane sapphire were investigated using the Fourier-transform infrared optical absorption technique.

Several GaN quantum well samples were grown with either AlGaN bulk or GaN/AlGaN short period superlattice barriers. The measurements were made in a waveguide configuration utilizing a facet Cited by: Topics include: introduction to quantum mechanics, Potential barriers and wells, electronic energy levels in periodic potentials, tunneling through potential barriers, distribution functions and density of states, optical properties of interband and intersubband transitions, electrical properties, techniques and measurements, growth issues.

If the address matches an existing account you will receive an email with instructions to reset your password. In the article the Schrödinger equation are shown to be connected with the symmetry point group of C_{6v}.

The exact solutions of the Schrödinger equations as well as Quantum Spin Hall effect of intersubband transitions of bulk GaN are found. For the hexagonal symmetry of GaN the Effective Hamiltonian based on C_{6v} point symmetry group was.

The study of semiconductor heterostructures started more than forty years ago. In the s this area of research moved to the forefront of semiconduc tor physics, largely due to progress in growth technologies which are now capable of producing ultrathin layers (up to a few monolayers) of different semiconductor materials.

The availability of structures with nearly ideal, well-controlled 5/5(1). Over the past two decades, infrared detection has become an important application. There have been many theoretical and experimental studies focused on the intersubband transitions in multiple quantum well systems.

We report on the two??color multiple quantum well infrared photodetector. The reported detector consists of two stacks of InGaAs wells and AlGaAs barriers grown on semi??insulating. Chapter 4. Ultrafast Dynamics of Intersubband Excitations in Quantum Wells and Quantum Cascade Structures T.

Elsaesser (Max Born Institute, Germany) Chapter 5. Optical Nonlinearities in Intersubband Transitions and Quantum Cascade Lasers C.

Gmachl (Princeton University), O. Malis (Bell Labs, Lucent Technologies), and A. Belyanin (Texas A&M. We have achieved a very narrow band and strong thermal radiation peak in a design wavelength by using intersubband transitions in quantum wells and two-dimensional photonic crystals.

Identifiers. book e-ISBN: Authors. Close. User assignment Assign yourself or. It is well known that the selection rules for intersubband transitions in quantum well structures require that the infrared light be polarized parallel to the growth direction.

As a result, the induced intersubband susceptibility tensor becomes highly anisotropic and the crystal becomes birefringent. We have studied the effect of induced birefringence at the midinfrared range of the spectrum Cited by: This book provides an introduction to quantum cascade lasers, including the basic underlying models used to describe the devices.

It aims at giving a synthetic view of the topic including the aspects of the physics, the technology, and the use of the device. It should also provide a guide for the application engineer to use this device in : Jérôme Faist.

@article{osti_, title = {Investigation of narrow-band thermal emission from intersubband transitions in quantum wells}, author = {De Zoysa, M.

and Hakubi Center, Kyoto University, Yoshida, Kyoto and Asano, T. and Inoue, T. and Mochizuki, K. and Noda, S.}, abstractNote = {We investigate thermal emission from n-doped GaAs/AlGaAs quantum wells (QWs). @article{osti_, title = {Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields}, author = {Balagula, R.

M., E-mail: [email protected] and Vinnichenko, M. Ya., E-mail: [email protected] and Makhov, I. and Firsov, D. and Vorobjev, L. E.}, abstractNote = {The effect of a lateral electric field.

Intersubband transitions in 3 MeV He + –ion irradiated GaAs–AlGaAs multiple quantum wells were studied using an optical absorption technique.

The intersubband transitions were completely depleted in samples irradiated with doses as low as 1×10 14 cm − by: 7.Optical intersubband response of a multiple quantum well (MQW)-embedded microcavity driven by a coherent pump field is studied theoretically. The n-type doped MQW structure with three subbands in the conduction band is sandwiched between a semi-infinite medium and a distributed Bragg reflector (DBR).Author: Ansheng Liu, Cun-Zheng Ning./ A normal-incident quantum well infrared photodetector enhanced by surface plasmon resonance.

Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon. (Proceedings of SPIE - The International Society for Optical Engineering).Author: Wei Wu, Alireza Bonakdar, Ryan Gelfand, Hooman Mohseni.

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